| 负电子亲和势GaAs光电阴极中的三光子激发和发射的理论研究 |
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| 引用本文： | 王力鸣 侯洵. 负电子亲和势GaAs光电阴极中的三光子激发和发射的理论研究[J]. 光学学报, 1992, 12(2): 68-174 |
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| 作者姓名： | 王力鸣 侯洵 |
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| 作者单位： | 中国科学院西安光学精密机械研究所 西安710068(王力鸣)，中国科学院西安光学精密机械研究所 西安710068(侯洵) |
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| 基金项目： | 国家自然科学基金会资助的项目 |
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| 摘 要： | 将三阶微扰理论应用于单晶GaAs半导体,结合与实际相接近的能带结构,得到了GaAs中三光子吸收系数的解析式表达式,在考虑了激发电子的逃逸过程的情况下,进而推导了负电子亲和势GaAs光电阴极中三光子光电发射的发射系数的解析表达式.两表达式得到的理论数值分别与用ns量级脉宽、2.06μm波长的激光测得的GaAs中三光子吸收系数和GaAs(Cs,O)光电阴极中三光子发射系数的实验值相比较,吻合较好.
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| 关 键 词： | 微扰 吸收 发射 GaAs半导体 多光子 |
| 收稿时间： | 1991-02-12 |
Theoretical study on three-photon excitation and photoemission on a negative electron af finity (NEA)GaAs photocathode |
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| WANG LIMING AND HOU XU. Theoretical study on three-photon excitation and photoemission on a negative electron af finity (NEA)GaAs photocathode[J]. Acta Optica Sinica, 1992, 12(2): 68-174 |
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| Authors: | WANG LIMING AND HOU XU |
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| Abstract: | Three-order perturbation theory is used for the study of monocrystalline GaAs. Under an assumption of a simplified but more realistic band structure of GaAs crystal, formulas of three-photon absorption coefficient are obtained. And further more, after the escape process of an excited electron being considered, formulas of thr ee-photon photoemission coefficient on a NEA GaAs photocathode are derived. The comparisons of theoretical calculated values with experimental ones are given. The experimental values are obtained by using a 2.06 μm ns pulse Q-switched laser. The theoretical values fit the experimental ones satisfactorily. |
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| Keywords: | three-order perturbation theory three-photon absorption coefficient three-photon photoemission coefficient GaAs semiconductor negative clectron affinity GaAs photooathode. |
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