| Electrical Characteristics of Copper Phthalocyanine Thin-Film Transistors with Polyamide-6/Polytetrafluoroethylene Gate Insulator |
| |
| 作者姓名： | 于顺洋 徐世艾 马东阁 |
| |
| 作者单位： | [1]Key Laboratory of Chemicals Manufacture Engineering of Shandong Province, Yantal University, Yantal 264005 [2]State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 |
| |
| 基金项目： | Supported by the High-Tech R＆D Programme of China under Grant No 2006A030203, the National Key Basic Research Programme of China under Grant No 2002CB613404, and the National Natural Science Foundation of China under Grant No 20625401. |
| |
| 摘 要： | Polyamide-6（PA 6）/polytetrafluoroethylene is studied as a potential gate dielectric for flexible organic thin film transistors. The same method used for the formation of organic semiconductor and gate dielectric films greatly simplifies the fabrication process of devices. The fabricated transistors show good electrical characteristics. Ambipolar behaviour is observed even when the device is operated in air.
|
| 关 键 词： | 聚酰胺 酞菁染料 铜 薄膜 电性质 |
| 收稿时间： | 2007-09-26 |
Electrical Characteristics of Copper Phthalocyanine Thin-Film Transistors with Polyamide-6/Polytetrafluoroethylene Gate Insulator |
| |
| YU Shun-Yang,XU Shi-Ai,MA Dong-Ge.Electrical Characteristics of Copper Phthalocyanine Thin-Film Transistors with Polyamide-6/Polytetrafluoroethylene Gate Insulator[J].Chinese Physics Letters,2007,24(12):3513-3515. |
| |
| Authors: | YU Shun-Yang XU Shi-Ai MA Dong-Ge |
| |
| Institution: | Key Laboratory of Chemicals Manufacture Engineering of Shandong Province, Yantai University, Yantai 264005State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 |
| |
| Abstract: | Polyamide-6(PA 6)/polytetrafluoroethylene is studied as a potential gate dielectric for flexible organic thin film transistors. The same method used for the formation of organic semiconductor and gate dielectric films greatly simplifies the fabrication process of devices. The fabricated transistors show good electrical characteristics. Ambipolar behaviour is observed even when the device is operated in air. |
| |
| Keywords: | 73 61 Ph 81 15 Ef 85 30 Tv |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理快报》浏览原始摘要信息 |
| 点击此处可从《中国物理快报》下载免费的PDF全文 |
