Infrared and Raman study of Si2Te3 |
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Authors: | U. Zwick K. H. Rieder |
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Affiliation: | (1) Max-Planck-Institut für Festkörperforschung, Stuttgart, Fed. Rep. Germany;(2) IBM-Zurich Research Laboratory, CH-8803 Rüschlikon, Switzerland;(3) Present address: Standard Elektrik Lorenz AG, Abteilung CKS/LOKB, Hellmuth-Hirth-Straße 42, D-7000 Stuttgart 40, Federal Republic of Germany |
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Abstract: | Results of ir and Raman investigations on trigonal layer-structured Si2Te3 single crystals are reported. The ir reflection spectrum withEc exhibits seven reststrahl-like bands, whereas the corresponding spectrum withEc shows only one very small bump. Values for0 and are given. The Raman spectra are very rich in structure and can only be interpreted qualitatively as being a mixture of single phonon lines and one- and two-phonon density-of-states contributions. One-phonon density-of-states effects are disorder-induced owing to the statistical occurrence of the Si atoms within the regular hexagonal Te sublattice. |
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