Infrared and Raman study of Si2Te3 |
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Authors: | U Zwick K H Rieder |
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Institution: | (1) Max-Planck-Institut für Festkörperforschung, Stuttgart, Fed. Rep. Germany;(2) IBM-Zurich Research Laboratory, CH-8803 Rüschlikon, Switzerland;(3) Present address: Standard Elektrik Lorenz AG, Abteilung CKS/LOKB, Hellmuth-Hirth-Straße 42, D-7000 Stuttgart 40, Federal Republic of Germany |
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Abstract: | Results of ir and Raman investigations on trigonal layer-structured Si2Te3 single crystals are reported. The ir reflection spectrum withEc exhibits seven reststrahl-like bands, whereas the corresponding spectrum withEc shows only one very small bump. Values for
0 and
are given. The Raman spectra are very rich in structure and can only be interpreted qualitatively as being a mixture of single phonon lines and one- and two-phonon density-of-states contributions. One-phonon density-of-states effects are disorder-induced owing to the statistical occurrence of the Si atoms within the regular hexagonal Te sublattice. |
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