Quantum compact model for thin-body double-gate Schottky barrier MOSFETs

Nanoscale Schottky barrier metal oxide semiconductor field-effecttransistors (MOSFETs) are explored by using quantum mechanismeffects for thin-body devices. The results suggest that for smallnonnegative Schottky barrier heights, even for zero barrier height,the tunnelling current also plays a role in the total on-statecurrent. Owing to the thin body of device, quantum confinementraises the electron energy levels in the silicon, and the tradeofftakes place between the quantum confinement energy and Schottkybarrier lowering (SBL). It is concluded that the inclusion of thequantum mechanism effect in this model, which considers an infiniterectangular well with a first-order perturbation in the channel, canlead to the good agreement with numerical result for thin siliconfilm. The error increases with silicon thickness increasing.