Quantum compact model for thin-body double-gate Schottky barrier MOSFETs |
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Authors: | Luan Su-Zhen and Liu Hong-Xia |
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Institution: | School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Ministry of Education for Wide Band-Gap
Semiconductor\\ Materials and Devices, Xi'an 710071, China |
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Abstract: | Nanoscale Schottky barrier metal oxide semiconductor field-effect
transistors (MOSFETs) are explored by using quantum mechanism
effects for thin-body devices. The results suggest that for small
nonnegative Schottky barrier heights, even for zero barrier height,
the tunnelling current also plays a role in the total on-state
current. Owing to the thin body of device, quantum confinement
raises the electron energy levels in the silicon, and the tradeoff
takes place between the quantum confinement energy and Schottky
barrier lowering (SBL). It is concluded that the inclusion of the
quantum mechanism effect in this model, which considers an infinite
rectangular well with a first-order perturbation in the channel, can
lead to the good agreement with numerical result for thin silicon
film. The error increases with silicon thickness increasing. |
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Keywords: | Schottky barrier quantum
mechanism effects effective mass electron density |
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