High-pressure syntheses of TaS3, NbS3, TaSe3, and NbSe3 with NbSe3-type crystal structure

Transition metal trichalcogenides TaSe₃, TaS₃, NbSe₃ and NbS₃ were prepared under the reaction conditions of 2 GPa, 700°C, 30 min. NbSe₃ is exactly the same as that obtained in the usual sealed-tube method. The other products are modifications of each usual phase. They have crystal structures very similar to that of NbSe₃. The lattice parameters are a = 10.02Å, b = 3.48 Å, c = 15.56 Å, β = 109.6° for TaSe₃, a = 9.52 Å, b = 3.35 Å, c = 14.92 Å, β = 110.0° for TaS₃, and a = 9.68 Å, b = 3.37 Å, c = 14.83 Å, β = 109.9° for NbS₃. In spite of the similarity in their crystal structures, these high-pressure phases show a variety of electrical transport properties. TaSe₃ is a superconductor having T_c at 1.9 K. TaS₃ is a semiconductor with two transitions at 200 and 250 K. NbS₃ is a semiconductor with E_a = 180 MeV.