PbFe12O19单晶体中的位错蚀斑研究

应用50％HCl作为浸蚀剂,对助熔法生长的PbFe₁₂O₁₉单晶体的(0001)解理面进行了浸蚀,以显示位错蚀斑。根据蚀斑所具有的形态,将其进行了分类,并确定了各自对应的位错类型。应用Mathews等人提出的机制,解释了在(0001)基面上所观察到的位错蚀斑阵列。 关键词：

STUDY OF DISLOCATION ETCH PITS ON PbFe12O19 SINGLE CRYSTALS

Using 50% HCI as etchant, we studied the morphology of dislocation etch pits on cleavaged (0001) basal faces of PbFe₁₂O₁₉ single crystals grown by the fluxed method. Three kinds of etch pits are found and two of them correspond to {1010} <1120> and {1011} <1120> types of dislocations, respectively. The third kind of etch pits is related to the presence of screw dislocations which are responsible for growth mechanism. Dislocation etch pits arrays observed on (0001) faces are interpreted by applying the mechanism proposed by Matthews et al.