| 雪崩PIN二极管中的电流丝运动 |
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| 引用本文： | 任兴荣,柴常春,马振洋,杨银堂,乔丽萍,史春蕾,任利华.雪崩PIN二极管中的电流丝运动[J].半导体学报,2013,34(4):044004-5. |
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| 作者姓名： | 任兴荣 柴常春 马振洋 杨银堂 乔丽萍 史春蕾 任利华 |
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| 作者单位： | Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China |
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| 摘 要： | The motion of current filaments in avalanching PIN diodes has been investigated in this paper by 2D transient numerical simulations.The simulation results show that the filament can move along the length of the PIN diode back and forth when the self-heating effect is considered.The voltage waveform varies periodically due to the motion of the filament.The filament motion is driven by the temperature gradient in the filament due to the negative temperature dependence of the impact ionization rates.Contrary to the traditional understanding that current filamentation is a potential cause of thermal destruction,it is shown in this paper that the thermally-driven motion of current filaments leads to the homogenization of temperature in the diode and is expected to have a positive influence on the failure threshold of the PIN diode.
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| 关 键 词： | PIN diode moving current filament self-heating effects impact ionization thermal runaway |
| 收稿时间： | 8/1/2012 12:00:00 AM |
Motion of current filaments in avalanching PIN diodes |
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| Ren Xingrong,Chai Changchun,Ma Zhenyang,Yang Yintang,Qiao Liping,Shi Chunlei and Ren Lihua.Motion of current filaments in avalanching PIN diodes[J].Chinese Journal of Semiconductors,2013,34(4):044004-5. |
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| Authors: | Ren Xingrong Chai Changchun Ma Zhenyang Yang Yintang Qiao Liping Shi Chunlei and Ren Lihua |
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| Institution: | Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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| Abstract: | The motion of current filaments in avalanching PIN diodes has been investigated in this paper by 2D transient numerical simulations. The simulation results show that the filament can move along the length of the PIN diode back and forth when the self-heating effect is considered. The voltage waveform varies periodically due to the motion of the filament. The filament motion is driven by the temperature gradient in the filament due to the negative temperature dependence of the impact ionization rates. Contrary to the traditional understanding that current filamentation is a potential cause of thermal destruction, it is shown in this paper that the thermally-driven motion of current filaments leads to the homogenization of temperature in the diode and is expected to have a positive influence on the failure threshold of the PIN diode. |
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| Keywords: | PIN diode moving current filament self-heating effects impact ionization thermal runaway |
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