| 均匀弯曲硅单晶X射线衍射行为 |
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| 引用本文： | 杨平.均匀弯曲硅单晶X射线衍射行为[J].物理学报,1992,41(2):267-271. |
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| 作者姓名： | 杨平 |
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| 作者单位： | 南京大学固体微结构物理国家实验室,南京,210008 |
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| 摘 要： | 本文研究均匀弯曲硅单晶的X射线衍射,实验得到的积分衍射强度随应变增强单调上升,与理论结果一致,在截面形貌上,Pendell?sung条纹的可见度随着应变的增强而降低,这反映了晶体内波场间相对强度差变大和波场轨迹的变化。
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| 关 键 词： | 硅 单晶 弯曲 X射线衍射 波场 |
| 收稿时间： | 1991-03-26 |
BEHAVIOUR OF X-RAY DIFFRACTION FROM UNIFORMLY BENT Si CRYSTAL |
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| YANG PING.BEHAVIOUR OF X-RAY DIFFRACTION FROM UNIFORMLY BENT Si CRYSTAL[J].Acta Physica Sinica,1992,41(2):267-271. |
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| Authors: | YANG PING |
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| Abstract: | X-ray diffraction from uniformly bent Si crystal has been studied. The experimental integrated diffraction intensity rises monotonically with the strain in the crystal, this coincides with the theory. The visibility of Pendell?sung fringes becomes poorer as the strain goes up, this reflects the increse of intensity difference between the wave fields and variation of the trace of the wave fields in the crystal.
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