|
|||||
|
|
Effects of process parameters on the optical constants of highly textured V2O5 thin films |
|
| Authors: | V V Atuchin V A Kochubey L D Pokrovsky V N Kruchinin C V Ramana |
| Institution: | 1. Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia 2. Functional Electronics Laboratory, Tomsk State University, Tomsk, 634050, Russia 3. Laboratory of Semiconductor and Dielectric Materials, Novosibirsk State University, Novosibirsk, 630090, Russia 4. Laboratory for Ellipsometry of Semiconductor Materials and Structures, Institute of Semiconductor Physics, Novosibirsk, 630090, Russia 5. Department of Mechanical Engineering, University of Texas at El Paso, El Paso, Texas, 79968, USA |
| Abstract: | The optical properties of the highly-textured V2O5 thin-films grown on Si(100) by sputter-deposition at various oxygen reactive-pressures were investigated in detail. The profiles of the optical constants, namely the refractive index and extinction coefficient, of V2O5 films were evaluated in the photon-energy range of 1–5 eV. At photon-energy above 2.5 eV, the dispersion behavior in optical constants is explained based on Lorentz-Drude model. The refractive index dispersion fits to a Cauchy’s relation at photon-energy below 2.5 eV, where the V2O5-film is mostly transparent. The optical transitions across the bandgap occur at energy ～2.5–3.2 eV depending on the V2O5 growth conditions and film-microstructure. The highly-textured and c-axis oriented V2O5-films, fabricated under optimum conditions of temperature and oxygen partial pressure, exhibit excellent optical characteristics similar to V2O5 single crystals. |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |