| 金属-砷化镓界面的电调制反射光谱与Franz-Keldysh效应研究 |
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| 引用本文： | 王斌,徐晓轩,秦哲,宋宁,张存洲. 金属-砷化镓界面的电调制反射光谱与Franz-Keldysh效应研究[J]. 光谱学与光谱分析, 2008, 28(8): 1701-1704. DOI: 10.3964/j.issn.1000-0593.2008.08.002 |
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| 作者姓名： | 王斌 徐晓轩 秦哲 宋宁 张存洲 |
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| 作者单位： | 南开大学泰达应用物理学院,天津,300457;南开大学弱光非线性光子学材料先进技术及制备教育部重点实验室,天津,300457;南开大学泰达应用物理学院,天津,300457;南开大学弱光非线性光子学材料先进技术及制备教育部重点实验室,天津,300457;南开大学泰达应用物理学院,天津,300457;南开大学弱光非线性光子学材料先进技术及制备教育部重点实验室,天津,300457;南开大学泰达应用物理学院,天津,300457;南开大学弱光非线性光子学材料先进技术及制备教育部重点实验室,天津,300457;南开大学泰达应用物理学院,天津,300457;南开大学弱光非线性光子学材料先进技术及制备教育部重点实验室,天津,300457 |
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| 基金项目： | 国家教育部振兴计划基金 |
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| 摘 要： | 通过调制光谱这种基础的光学方法来研究Au-GaAs，Al-GaAs，Ni-GaAs的金属半导体界面的一些电学性质，并且加以比较，其中包括电场、费米能级扎钉和界面态密度等情况。这些界面是通过在SIN+ GaAs样品上沉积金属(Au，Al，Ni)生长成的。通过观察电反射谱来研究金属GaAs的界面电场和费米能级扎钉的情况，然后通过傅里叶变换这些所取得的电反射谱来分析这些材料的界面性质。通过测量氦氖激光器诱导产生的光电压和激光器光强之间的关系来得到这些材料的界面态密度情况，从而进行进一步的研究。
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| 关 键 词： | 金属半导体界面 Franz-Keldysh效应 光伏效应 电调制反射谱 |
| 收稿时间： | 2007-02-09 |
Study of Electroreflectance Spectrum and Franz-Keldysh Effect at Metal-GaAs Interfaces |
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| WANG Bin,XU Xiao-xuan,QIN Zhe,SONG Ning,ZHANG Cun-zhou. Study of Electroreflectance Spectrum and Franz-Keldysh Effect at Metal-GaAs Interfaces[J]. Spectroscopy and Spectral Analysis, 2008, 28(8): 1701-1704. DOI: 10.3964/j.issn.1000-0593.2008.08.002 |
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| Authors: | WANG Bin XU Xiao-xuan QIN Zhe SONG Ning ZHANG Cun-zhou |
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| Affiliation: | 1.TEDA Applied Physics School, Nankai University, Tianjin 300457, China2.The Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials, Ministry of Education, Nankai University, Tianjin 300457, China |
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| Abstract: | Electronic properties(electric field,Fermi level pinning and density of interface states) of Au-GaAs,Al-GaAs and Ni-GaAs interfaces were studied by optical methods.These interfaces were fabricated by depositing metals(Ni,Au and Al) on specialized surface-intrinsic-n (SIN ) GaAs samples.Electroreflectance(ER) was used to study the electric fields and Fermi level pinnings of metal-GaAs interfaces.Fourier transformation(FT) of ER spectra was used to analyze these interfacial properties.Assuming that only a fraction of the total illuminated area was the effective interface state area,the density of interface states was obtained by measuring the relation between the photovoltage induced by an exciting He-Ne laser beam and the illumination intensity of the laser beam. |
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| Keywords: | Metal-Semiconductor interfaces Franz-Keldysh effect Photovoltage effect Electroreflectance(ER) |
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