金属-砷化镓界面的电调制反射光谱与Franz-Keldysh效应研究

通过调制光谱这种基础的光学方法来研究Au-GaAs，Al-GaAs，Ni-GaAs的金属半导体界面的一些电学性质，并且加以比较，其中包括电场、费米能级扎钉和界面态密度等情况。这些界面是通过在SIN+ GaAs样品上沉积金属(Au，Al，Ni)生长成的。通过观察电反射谱来研究金属GaAs的界面电场和费米能级扎钉的情况，然后通过傅里叶变换这些所取得的电反射谱来分析这些材料的界面性质。通过测量氦氖激光器诱导产生的光电压和激光器光强之间的关系来得到这些材料的界面态密度情况，从而进行进一步的研究。

Study of Electroreflectance Spectrum and Franz-Keldysh Effect at Metal-GaAs Interfaces

Electronic properties(electric field,Fermi level pinning and density of interface states) of Au-GaAs,Al-GaAs and Ni-GaAs interfaces were studied by optical methods.These interfaces were fabricated by depositing metals(Ni,Au and Al) on specialized surface-intrinsic-n (SIN ) GaAs samples.Electroreflectance(ER) was used to study the electric fields and Fermi level pinnings of metal-GaAs interfaces.Fourier transformation(FT) of ER spectra was used to analyze these interfacial properties.Assuming that only a fraction of the total illuminated area was the effective interface state area,the density of interface states was obtained by measuring the relation between the photovoltage induced by an exciting He-Ne laser beam and the illumination intensity of the laser beam.