| REGaSi的合成、结构及Ga-Si成键网络 |
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| 引用本文： | 赵景泰. REGaSi的合成、结构及Ga-Si成键网络[J]. 中国稀土学报, 1999, 17(2): 169-171 |
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| 作者姓名： | 赵景泰 |
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| 作者单位： | [1]厦门大学材料科学系 [2]厦门大学化学系 |
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| 基金项目： | 国家自然科学基金,国家教委优秀年轻教师基金 |
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| 摘 要： | 用电弧熔炼法合成了系列化合物ＲＥＧａＳｉ，采用粉末Ｘ射线衍射方法测定了化合物ＳｍＧａＳｉ的晶体结构，获得其晶体学及结构修正参数为；四方晶系，ＬａＰｔＳｉ类型，（１０９）Ｉ４１ｍｄ，Ｍｒ＝２５０．０，ａ＝０．４１３４（３）ｎｍ，ｃ＝１．４２２（２）ｎｍ，Ｖ＝０．２４３０（５）ｎｍ＾３，Ｚ＝４，Ｄｘ＝６．４６４ｇ．ｃｍ＾－３，Ｆ（０００）＝４２８，Ｔ＝２９６Ｋ。
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| 关 键 词： | 稀土 镓 硅 金属间化合物 成键网络 晶体结构 |
| 修稿时间： | 19981012 |
Synthesis of REGaSi and GdSi Covalent Bonded Networkin the Structure |
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| Zhao Jingtai,Mi Jinxiao,Huang Zhongle,Dai Yilong,Mao Shaoyu,Song Minghu. Synthesis of REGaSi and GdSi Covalent Bonded Networkin the Structure[J]. Journal of the Chinese Society of Rare Earths, 1999, 17(2): 169-171 |
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| Authors: | Zhao Jingtai Mi Jinxiao Huang Zhongle Dai Yilong Mao Shaoyu Song Minghu |
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| Affiliation: | Zhao Jingtai1,Mi Jinxiao1,Huang Zhongle2,Dai Yilong2,Mao Shaoyu2,Song Minghu1 |
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| Abstract: | The eight title compounds were synthesized by arcmelting method and their crystal structures were characterized by Xray powder diffraction method. Crystallographic and refined structure parameters of SmGaSi are obtained as follows: Mr=2500, tetragonal, LaPtSitype, (109)I41 md, a=04134(3) nm, c=1422(2) nm, V=02430(5) nm3, Dx=6464 gcm-3, F(000)=428, T=296 K. The unit cell parameters for other compounds were obtained and showed normal lanthanide contraction. The main structure feature is covalent bonded GaSi three dimensional network. The formula might be written as RE3 Ga2-Si1- in the classical limit and the compounds were referred as metallic Zintl phase. The atom coordinations in the compounds follow the general coordination enviroment rule for multinary intermetallic compounds. |
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| Keywords: | Rare earths Silicon Gallium Intermetallic compounds Bonded network Crystal structrue |
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