| C59N单分子整流器 |
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| 引用本文： | 王克东,李斌,杨金龙,侯建国.C59N单分子整流器[J].物理,2006,35(3):188-192. |
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| 作者姓名： | 王克东 李斌 杨金龙 侯建国 |
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| 作者单位： | 合肥微尺度物质科学国家实验室,中国科学技术大学,合肥,230026 |
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| 基金项目： | 科技部科研项目;中国科学院资助项目;中国科学院超级计算中心资助项目 |
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| 摘 要： | 通过将单个C59N分子置于双势垒隧道结中，从而利用单电子隧穿效应和C59N分子的特殊能级结构，我们成功地实现了一种新型的单分子整流器件．实验中这个整流器件的正向导通电压约为0．5-0．7V，反向击穿电压约为1．6—1．8V．理论分析表明，中性C59N分子的半占据费米能级以及在不同充电情况下费米能级的不对称移动是形成整流效应的主要原因．其构成原理也决定了该器件具有稳定、易重复的特点．
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| 关 键 词： | 电子物理学 整流效应 扫描隧道显微镜(STM) 单电子隧穿(SET) |
| 收稿时间： | 2005-09-05 |
| 修稿时间： | 2005-09-052005-10-18 |
Single C59N molecule as a molecular rectifier |
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| WANG Ke-Dong,LI Bin,YANG Jin-Long,HOU Jian-Guo.Single C59N molecule as a molecular rectifier[J].Physics,2006,35(3):188-192. |
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| Authors: | WANG Ke-Dong LI Bin YANG Jin-Long HOU Jian-Guo |
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| Institution: | Hefei National Laboratory for Physical Sciences at Microscale,University of Science and Technology of China , Hefei 230026, China |
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| Abstract: | By placing a single C59 N molecule in type of single molecule rectifier device based on the a double - barrier tunnel junction we have realized a new single electron tunneling effect and the special electronic structure of the C59N molecule. In our experiments the positive onset voltage is about 0.5-0.7 V, while the negative onset vohage is about 1,6-1.8 V, Theoretical analyses show that the half - occupied Fermi level of the neutral C59 N molecule and the asymmetric shift of the Fermi level when the molecule is charged are responsible for the molecular rectification. The principle of this molecular device ensures the stability and repeatability of its rectifying properties. |
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| Keywords: | C59N |
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