退火处理对掺铒氢化非晶硅悬挂键密度和光致荧光的影响

采用磁控溅射技术制备了铒掺杂的氢化非晶硅(a-Si∶H(Er))样品.进一步通过200—500℃温度递增的后退火处理，获得了不同的Si悬挂键(Si-DBs)密度，并在此基础上研究了Si-DBs密度改变对其Er光荧光(Er-PL)的影响.退火温度低于350℃时，Er-PL强度持续增加，但Si-DBs密度的变化显得较复杂；350℃以上时，Er-PL强度随Si-DBs密度的增加而减小.在200—250℃的退火温度范围内，Si-DBs是由于结构弛豫而减少；在250—500℃的退火温度范围内，可能由于Si—H键的断关键词：氢化非晶硅铒掺杂Si悬挂键光荧光

Annealing effect on the photoluminescence and dangling bonddensity in erbium-doped hydrogenated amorphous silicon

In this paper, Er photoluminescence(PL) of Er-doped a-Si:H films, prepared by rf magnetron co-sputtering with various densities of Si dangling bonds(DBs), was studied with structure modification resulting from post annealing at a temperature range of 200-500℃. It was unexpectedly found that, the intensity of the Er-PL continually increases with annealing temperature below 350℃, meanwhile the density of Si-DBs decreases up to 250℃ due to the structural relaxation but then increases up to 500℃ probably due to Si-H being broken. Since the Er³⁺ ion transition depends on the symmetry of the Er³⁺ site in the host. The increase in the Er-PL intensity against the decrease of the density of Si-DBs is probably attributed to a change in the environment of Er³⁺ ions during annealing.