On using lens-assisted hologram interferometry to investigate semiconductor device behaviour

The paper analyses some of the causes that limit the performance of the hologram interferometry method when used for the study of the behaviour of semiconductors devices. Then some results are shown obtained by the authors using a method of lens-assisted microscope hologram interferometry for studying such structures. The method allows detection of defects and, besides, it renders quantitatively the structure local non-uniformities during the normal operation of the semiconductor devices.