Electromigration-induced damage in bamboo Al interconnects |
| |
Authors: | J Böhm C A Volkert R Mönig T J Balk E Arzt |
| |
Institution: | (1) Max Planck Institute for Metals Research, Stuttgart, Germany |
| |
Abstract: | Depletion and hillock formation were examined in-situ in a scanning electron microscope (SEM) during electromigration of bamboo
Al interconnect segments. Hillocks formed directly at the anode ends of the segments by epitaxial addition of Al at the bottom
Al/TiN interface. Depletion occurred nonuniformly from the cathode end and stopped once the distance between the leading void
and the hillock reached the critical length for electromigration at the given current density. A modified equation for the
drift velocity is proposed, which includes the effect of nonuniform depletion and predicts that interconnects with nonuniform
depletion are more reliable than those with uniform depletion. |
| |
Keywords: | Electromigration whisker formation hillock formation |
本文献已被 SpringerLink 等数据库收录! |