Intrinsic and extrinsic defects in semiconductors studied by perturbed γγ angular correlation spectroscopy

The application of the perturbed γγ angular correlation technique as an analytical tool for the characterisation of atomic defect configurations is discussed. Using the radioactive probe atom¹¹¹In/¹¹¹Cd, recent results on the compensation of acceptor and donor atoms in different II–VI semiconductors will be discussed, in particular the role of the cation vacancy defect.