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低温凝聚InSb膜的相变和超导电性
引用本文:曹效文,张裕恒.低温凝聚InSb膜的相变和超导电性[J].物理学报,1983,32(9):1191-1195.
作者姓名:曹效文  张裕恒
作者单位:(1)中国科学技术大学物理系; (2)中国科学院等离子体物理研究所
摘    要:本文研究了低温凝聚InSb膜的相变和超导电性,获得了以下新的实验结果:(1)第一次电导跃变是自发的,与InSb凝聚温度无关;(2)第二次跃变发生并达到峰值后,退火温度进一步升高,电导迅速减小,并伴随着结晶半导体相的形成。但实验证明它是一个亚稳结晶相,当退火温度再升高时,发生第三次跃变,形成的相也是一个金属相,但直到1.5K未出现超导电性;(3)第一次电导跃变后形成的金属相是超导的,其Tc随底板温度不同而不同。 关键词

收稿时间:1982-12-27

THE PHASE TRANSITION AND SUPERCONDUCTIVITY OF InSb FILMS CONDENSED AT LOW TEMPERATURE
CAO XIAO-WEN and ZHANG YU-HENG.THE PHASE TRANSITION AND SUPERCONDUCTIVITY OF InSb FILMS CONDENSED AT LOW TEMPERATURE[J].Acta Physica Sinica,1983,32(9):1191-1195.
Authors:CAO XIAO-WEN and ZHANG YU-HENG
Abstract:We have studied the phase transition and superconductivity of InSb films condensed on substrate at low temperatures and obtained the following new experimental results: (a) First jump of conductance is spontaneous and independent of temperature in the temperature region in which InSb films were condensed, (b) After second jump of the conductance appears and reaches a peak, the conductance drops quickly and is accompanied by the formation of crystalline semiconductor phase as annealing temperature is increased further. But experimental results show that it is a metastable crystalline phase and third jump of the conductance takes place as annealing temperature is raised further. The phase formed after third jump of the conductance is a metallic one, but it does not become superconductive until 1.5 K. (c) Superconducting transition temperature of the phase formed after first jump of the conductance is different along with different temperatures of the substrate.
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