| 窄禁带半导体的P-N结的间接隧道电容 |
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| 引用本文： | 林和,汤定元.窄禁带半导体的P-N结的间接隧道电容[J].半导体学报,1988,9(1):48-59. |
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| 作者姓名： | 林和 汤定元 |
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| 作者单位： | 中国科学院上海技术物理研究所 上海
(林和)，中国科学院上海技术物理研究所 上海(汤定元) |
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| 摘 要： | 采用通过深能级杂质的间接隧道过程与热激发、俘获过程之间的细致平衡,推导出间接隧道过程所引起的电容的理论表达式.这一电容仅出现在零偏压附近,不是电压的单调上升函数,有极大值及负值出现.作了数值计算,所得 C-V曲线的形状与窄禁带 Hg_(1-x)Cd_xTe P-N结的实测的C-V曲线的形状相似.
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| 关 键 词： | 窄禁带半导体 p-n结 间接隧道电容 |
Indirect Tunnelling Capacity of the P-N Junction of the Narrow Band-Gap Semiconductors |
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| Lin He/.Indirect Tunnelling Capacity of the P-N Junction of the Narrow Band-Gap Semiconductors[J].Chinese Journal of Semiconductors,1988,9(1):48-59. |
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| Authors: | Lin He/ |
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| Institution: | Lin He/Shanghai Institute of Technical Physics,Academia Sinica,ShanghaiTang Dingyuan/Shanghai Institute of Technical Physics,Academia Sinica,Shanghai |
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| Abstract: | The expression of the capacity caused by the indirect tunelling process is derived by usingthe detailed balance between the process of indirect tunelling via deep impurity level and theprocess of thermal excitation and trapping.This capacity appears only in a narrow range ofbias voltage around zero bias voltage.The C-V characteristic is not the usual monotonous fun-ction of voltage, but has a maximum and negative values in a range of bias voltage.Numeri-cal calculations are made.The shape of the calculated C-V curves is similar to that of the me-asured C-V curves obtained on the p-n junctions of narrow gap semiconductors Hg_(1-x)Cd_xTe. |
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| Keywords: | Narrow band-gap semiconductor p-n junction Indirect tunnelling capacity |
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