| 基于器件特性的改进高效率F类微带拓扑分析与实现 |
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| 引用本文： | 雷奇,何松柏,董磊,游飞.基于器件特性的改进高效率F类微带拓扑分析与实现[J].电路与系统学报,2012,17(4):13-17,22. |
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| 作者姓名： | 雷奇 何松柏 董磊 游飞 |
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| 作者单位： | 电子科技大学集成电路与系统系,四川成都,610054 |
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| 摘 要： | 本文提出了一种新型的F类高效率功率放大器微带匹配拓扑。该拓扑简单紧凑且考虑了功率三极管输出端寄生效应,使得F类设计理论分析更贴合实际。基于提出的拓扑结构,采用商用10W GaN HEMT(Gallium-Nitrogen High Electron Mobility Transistor)进行了仿真与硬件实现。测试结果表明:当漏极偏置27V,工作频率2.995GHz时,实测输出功率为37.3dBm,功率附加效率为72.9%。在15~30V的偏置范围内,漏极调制效率达到68.9%以上。实测与仿真结果的吻合,很好的验证了拓扑的可行性。
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| 关 键 词： | 功率放大器 谐波控制 微带 拓扑 高效率 |
The improved high-efficiency class F microstrip topology analysis and realization based on device characteristics |
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| LEI Qi
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HE Song-bai
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DONG Lei
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YOU Fei.The improved high-efficiency class F microstrip topology analysis and realization based on device characteristics[J].Journal of Circuits and Systems,2012,17(4):13-17,22. |
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| Authors: | LEI Qi HE Song-bai DONG Lei YOU Fei |
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| Institution: | (University of Electronic Science and Technology of China,Integrated Circuits and Systems department,Chengdu 610054,China) |
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| Abstract: | This paper describes a novel transmission-line-based compact matching-network to implement Class F power amplifier(PA).With consideration of device parasitic effects,it adapts Class F PA theoretical analysis to physical reality.The commercial 10W GaN HEMT is used in the corresponding simulation and experiment.The measurement results show that,at 2.995GHz in the supply voltage of 27V,the output power of 37.3 dbm and power-added efficiency(PAE) of 72.9% are obtained.Moreover,a drain efficiency(DE) higher than 68.9% is maintained within the 15-30 V supply range. |
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| Keywords: | power amplifier harmonic-control microstrip topology high efficiency |
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