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Chemical Infiltration during Atomic Layer Deposition: Metalation of Porphyrins as Model Substrates |
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| Authors: | Lianbing Zhang Avinash J. Patil Dr. Le Li Angelika Schierhorn Dr. Stephen Mann Prof. Ulrich Gösele Prof. Mato Knez Dr. |
| Affiliation: | 1. Max‐Planck‐Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle/Saale (Germany), Fax: (+49)?345‐551‐1223;2. Centre for Organized Matter Chemistry, School of Chemistry, University of Bristol (UK);3. Institut für Planzenphysiologie, Martin‐Luther‐Universit?t, Halle (Germany);4. Institut für Biochemie und Biotechnologie, Martin‐Luther‐Universit?t, Halle (Germany) |
| Abstract: | New uses for ALD : By applying standard metal oxide atomic layer deposition (ALD) to two types of porphyrins, site‐specific chemical infiltration of substrate molecules is achieved: Diethylzinc can diffuse into the interior of porphyrin supramolecular structures and induce metalation of the porphyrin molecules from the vapor phase. A=Ph, p‐HO3SC6H4.  |
| Keywords: | atomic layer deposition metalation porphyrinoids vapor‐phase infiltration zinc |