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Effect of electric field on diffusion in disordered materials |
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| Authors: | F Jansson AV Nenashev SD Baranovskii F Gebhard R sterbacka |
| Institution: | 1. Graduate School of Materials Research, ?bo Akademi University, 20500 Turku, Finland;2. Institute of Semiconductor Physics, 630090 Novosibirsk, Russia;3. Novosibirsk State University, 630090 Novosibirsk, Russia;4. Department of Physics and Material Sciences Center, Philipps‐University, 35032 Marburg, Germany;5. Department of Physics and Center for Functional Materials, ?bo Akademi University, 20500 Turku, Finland |
| Abstract: | The effect of electric field on diffusion of charge carriers in disordered materials is studied by Monte Carlo computer simulations and analytical calculations. It is shown how an electric field enhances the diffusion coefficient in the hopping transport mode. The enhancement essentially depends on the temperature and on the energy scale of the disorder potential. It is shown that in one‐dimensional hopping the diffusion coefficient depends linearly on the electric field, while for hopping in three dimensions the dependence is quadratic. |
| Keywords: | Hopping transport diffusion disorder |