Localization of excitons in weakly disordered semiconductor structures: A model study |
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| Authors: | N. G gh,P. Thomas,I. Kuznetsova,T. Meier,I. Varga |
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| Affiliation: | 1. Department of Physics and Material Sciences Center, Philipps‐Universit?t Marburg, Renthof 5, 35032 Marburg, Germany;2. Phone: +00 49 6421 2824224, Fax: +00 49 6421 2827076;3. Department Physik, Fakult?t für Naturwissenschaften, Universit?t Paderborn, Wartburger Str. 100, 33098 Paderborn, Germany;4. Elméleti Fizika Tanszék, Fizikai Intézet, Budapesti Müszaki és Gazdaságtudományi Egyetem, 1111 Budapest, Budafoki út 8, Hungary |
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| Abstract: | Localization of the center‐of‐mass (com) motion of an exciton in a disordered semiconductor structure is studied theoretically by focusing on nonlinear optical spectroscopy. A one‐dimensional tight‐binding model with diagonal disorder is applied and the Coulomb interaction is treated consistently. In the ordered situation the center‐of‐mass momentum (K) selection rule leads to only the lowest transition for K = 0. The break down of the com‐K‐selection rule produces the well known asymmetric excitonic lines of disordered semiconductors. The coupling between the lowest dominant transition to this modified com‐continuum yields Fano‐like features in the nonlinear spectra. |
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| Keywords: | Disordered semiconductor heterostructures excitons localizations Fano‐coupling. |
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