Conductance asymmetry of a slot gate Si‐MOSFET in a strong parallel magnetic field |
| |
| Authors: | I Shlimak DI Golosov A Butenko K‐J Friedland SV Kravchenko |
| |
| Institution: | 1. Phone: +972 3 531 8176, Fax: +972 3 531 7749;2. Jack and Pearl Resnick Institute of Advanced Technology, Department of Physics, Bar‐Ilan University, Ramat‐Gan 52900, Israel;3. Paul‐Drude Institut für Festk?rperelektronik, Hausvogteiplatz 5–7, 10117, Berlin, Germany;4. Physics Department, Northeastern University, Boston, Massachusetts 02115, USA |
| |
| Abstract: | We report measurements on a Si‐MOSFET sample with a slot in the upper gate, allowing for different electron densities n1,2 across the slot. The dynamic longitudinal resistance was measured by the standard lock‐in technique, while maintaining a large DC current through the source‐drain channel. We find that the conductance of the sample in a strong parallel magnetic field is asymmetric with respect to the DC current direction. This asymmetry increases with magnetic field. The results are interpreted in terms of electron spin accumulation or depletion near the slot. |
| |
| Keywords: | Two‐dimensional conductivity spin accumulation Si‐MOSFET |
|
|
