Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia |
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Authors: | LIN Guo-Qiang ZENG Yi-Ping WANG Xiao-Liang LIU Hong-Xin |
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Affiliation: | Novel Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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Abstract: | Hexagonal GaN is grown on a Si(111) substrate with AlN as a buffer layer by gas source molecular beam epitaxy (GSMBE) with ammonia. The thickness of AlN buffer is changed from 9 to 72nm. When the thickness of AlN buffer is 36nm, the surface morphology and crystal quality of GaN is optimal. The in-situ reflection high energy electron diffraction (RHEED) reveals that the transition to a two-dimensional growth mode of AlN is the key to the quality of GaN. However, the thickness of AlN buffer is not so critical to the residual in-plane tensile stress in GaN grown on Si(111) by GSMBE for AlN thickness between 9 to 72nm. |
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Keywords: | 72.80.Ey 81.15.Gh 61.14.Hg |
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