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Ultraviolet and Deep-Ultraviolet Emissions from c-MgxZn1-xO/MgO Ultrathin Multilayer Heterostructures
引用本文:余萍 邱东江 吴惠桢. Ultraviolet and Deep-Ultraviolet Emissions from c-MgxZn1-xO/MgO Ultrathin Multilayer Heterostructures[J]. 中国物理快报, 2005, 22(10): 2688-2691
作者姓名:余萍 邱东江 吴惠桢
作者单位:[1]Department of Physics, Zhejiang University, Hangzhou 310027 [2]State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027
基金项目:Supported by the National Natural Science Foundation of China under Grant No 50472058.
摘    要:Cubic phase MgxZn1-x O/MgO multilayer heterostructures (c-Mgx Zn1-xO/MgO MHs) are grown on Si(100) and quartz substrates by reactive electron beam evaporation at low temperature (250℃). Cross-sectional morphology observations by field-emission scanning electron microscopy show the legible interfaces of c-MgxZn1-x O/MgO MHs. X-ray diffraction demonstrates that c-MgxZn1-xO/MgO MHs are of highly (100)-oriented. Optical trans- mission investigations of c-Mgx Zn1-x O/MgO MHs on quartz substrates reveal the coexistence of the two phases, c-MgxZn1-xO and MgO. Photoluminescence examination indicates the emergence of deep-ultraviolet emission centred at about 290nm along with the blue shift of the ultraviolet emission from 405nm to 39Gnm when the nominal thickness of c-MgxZn1-xO well layers of MHs is diminished to 3nm, which is probably originated from quantum confinement effect.

关 键 词:c-MgxZn1-xO MgO 紫外线 超薄多层异质结构 电子束 光致发光
收稿时间:2005-04-30
修稿时间:2005-04-30

Ultraviolet and Deep-Ultraviolet Emissions from c-MgxZn1-xO/MgO Ultrathin Multilayer Heterostructures
Yu Ping;Qiu DongJiang;Wu HuiZhe. Ultraviolet and Deep-Ultraviolet Emissions from c-MgxZn1-xO/MgO Ultrathin Multilayer Heterostructures[J]. Chinese Physics Letters, 2005, 22(10): 2688-2691
Authors:Yu Ping  Qiu DongJiang  Wu HuiZhe
Abstract:
Keywords:
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