大功率半导体激光器线阵列电流扩展的研究

利用金属有机物气相淀积生长了980 nm GaAs/AlGaAs分别限制应变单量子阱激光器物质，通过常规工艺制成国际标准的1 cm半导体激光器线阵列。隔离槽的深度与电流扩展有着密切的关系，对出光功率等重要参数有着较大的影响。通过隔离槽变深度实验，发现在不超过有源层的前提下，输出功率和斜率效率与隔离槽深度均成正比，阈值电流与隔离槽深度成反比，隔离槽深度过深即超过有源层会导致激光器线阵列的主要参数下降，从而最佳腐蚀深度应不超过有源层，本实验为1.993 mm。

Current expansion of high-power diode laser bars

980 nm GaAs/AlGaAs separate confinement hetero-structure single quantum well laser bars were grown by metal organic chemical vapor deposition. The relationships between the etching depth and the bars’ parameters have been studied. When the bar is not etched deep to the active layer, the output power and the slope efficiency are in direct proportion to the etching depth, while the threshold current are in inverse proportion to the etching depth. When the bar is etched deeper than the active layer, the output power and the slope efficiency become lower and the threshold current become higher. The best etching depth is 1.993 mm in the experiment, which is less than the depth of the active layer.