| SiO2内保护层对LiB3O5晶体倍频增透膜损伤阈值的影响 |
| |
| 引用本文： | 于爱芳, 范飞镝, 刘中星, 等. SiO2内保护层对LiB3O5晶体倍频增透膜损伤阈值的影响[J]. 强激光与粒子束, 2007, 19(04). |
| |
| 作者姓名： | 于爱芳 范飞镝 刘中星 朱镛 陈创天 |
| |
| 作者单位： | 1.中国科学院 理化技术研究所 人工晶体研究与发展中心, 北京 1 00080;;;2.中国科学院 研究生院, 北京 1 00039 |
| |
| 摘 要： | 利用离子辅助电子束沉积方法在LiB3O5基底上镀制了不加SiO2内保护层和加SiO2内保护层的倍频增透膜，测量了两类薄膜在波长1 064 nm多脉冲辐照下的激光损伤阈值，获得了两种不同的损伤形貌，并对损伤原因作了初步探讨。实验结果表明：保护层的加入把由基底膜层界面缺陷吸收所决定的阈值改变到由HfO2膜层内缺陷吸收所决定的阈值，显著提高了倍频增透膜的抗激光损伤能力。
|
| 关 键 词： | LiB3O5 SiO2内保护层 倍频增透膜 激光损伤阈值 损伤形貌 |
Effect of SiO2 barrier layer on laser induced damage threshold of second harmonic antireflection coatings on LiB3O5 crystal |
| |
| yu ai-fang, fan fei-di, liu zhong-xing, et al. Effect of SiO2 barrier layer on laser induced damage threshold of second harmonic antireflection coatings on LiB3O5 crystal[J]. High Power Laser and Particle Beams, 2007, 19. |
| |
| Authors: | yu ai-fang fan fei-di liu zhong-xing zhu yong chen chuang-tian |
| |
| Affiliation: | 1. Beijing Center for Crystal Research and Development,Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Beijing 100080,China;;;2. Graduate School of Chinese Academy of Sciences,Beijing 100039,China |
| |
| Abstract: | Two different kinds of second harmonic antireflection(AR) coatings, with and without SiO2 barrier layer were prepared with ion assisted deposition on LiB3O5 crystal. Laser induced damage threshold(LIDT) by multiple-shot irradiation at 1 064 nm was studied and two typical damage morphologies were observed by SEM. The AR coatings with SiO2 barrier layer have an excellent LIDT, which is about 40% higher than that of coatings without barrier layer. The mechanism of LIDT enhancement by adding SiO2 barrier layer is also discussed. |
| |
| Keywords: | lib3o5 crystal sio2 barrier layer second harmonics antireflection coating laser induced damage threshold(lidt) damage morphology |
|
| 点击此处可从《强激光与粒子束》浏览原始摘要信息 |
|
点击此处可从《强激光与粒子束》下载全文 |
