| 硼含量对含硼金刚石单晶电学性能的影响 |
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| 引用本文： | 张娜,李木森,张元培,田斌. 硼含量对含硼金刚石单晶电学性能的影响[J]. 人工晶体学报, 2010, 39(2): 295-298 |
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| 作者姓名： | 张娜 李木森 张元培 田斌 |
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| 作者单位： | 山东大学材料液固结构演变与加工教育部重点实验室,济南,250061;山东省超硬材料工程技术研究中心,邹城,273500 |
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| 基金项目： | 国家自然科学基金，山东省自然科学基金 |
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| 摘 要： | 采用碳化硼添加量不同的铁基触媒,在高温高压下合成含硼金刚石单晶.用数字电桥和自制的电阻测量夹具测量了含硼金刚石单晶的电阻;用阴极射线发光光谱测量了金刚石单晶的光子频数;用XRD检测了不同硼含量掺杂的金刚石单晶的晶体结构.结果表明:随着触媒中碳化硼添加量的增加,含硼金刚石单晶的电阻率降低,可呈现半导体电阻特性.其原因是硼元素的掺入促进了金刚石单晶的(111)晶面生长,使受主能级提高,晶体的带隙变窄,载流子浓度提高.
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| 关 键 词： | 含硼金刚石 碳化硼 高温高压合成 电阻, |
Influence of Boron Concentration on Electrical Properties of Boron-doped Diamond Single Crystals |
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| ZHANG Na,LI Mu-sen,ZHANG Yuan-pei,Tian Bin. Influence of Boron Concentration on Electrical Properties of Boron-doped Diamond Single Crystals[J]. Journal of Synthetic Crystals, 2010, 39(2): 295-298 |
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| Authors: | ZHANG Na LI Mu-sen ZHANG Yuan-pei Tian Bin |
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| Affiliation: | ZHANG Na1,2,LI Mu-sen1,ZHANG Yuan-pei1,Tian Bin1,(1.Key Laboratory for Liquid-solid Structural Evolution , Processing of Materials,Ministry of Education,Sh,ong University,Jinan 250061,China,2.Sh,ong Engineering Research Center for Superhard Materials,Zoucheng 273500,China) |
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| Abstract: | By additing of different contents of boron carbides in the iron-based catalysts,the boron-doped diamond single crystals had been synthesized under high pressure and high temperature.The resistances of the diamonds with different boron concentration were measured by a digital electric bridge and the self-made electrode clamps.The variations of photon numbers were detected by a cathodeluminescence.The phase structures were characterized by XRD.The results show that the specific resistance of the boron-doped d... |
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| Keywords: | boron-doped diamond boron carbide synthesis under HPHT resistance |
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