| 微光像增强器光阴极灵敏度理论极限问题研究 |
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| 引用本文： | 向世明.微光像增强器光阴极灵敏度理论极限问题研究[J].应用光学,2008,29(1):48-51. |
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| 作者姓名： | 向世明 |
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| 作者单位： | 西安应用光学研究所,第二研究室,微光夜视技术国防科技重点实验室,陕西,西安,710065 |
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| 摘 要： | 光阴极灵敏度(量子效率)是微光像增强器最重要和最基本的性能参数之一，它决定着微光成像系统在低照度下的视距和图像清晰度。根据半导体光电发射物理模型及普朗克黑体辐射理论,简介了光电发射5个环节（光子不完全吸收、GaAlAs/GaAs后界面、GaAs光阴极激活层体特性缺陷、GaAs光阴极表面位垒和GaAs光阴极-MCP之间近贴电场电子隧道效应）对光阴极量子效率的影响，给出了相关数学表达式。在假定5个环节子量子效率均为100%的前提下，估算出蓝延伸GaAs光阴极在（0.41～0.93）μm波段内的极限积分灵敏度，其值为6569μA/lm。文末，对此结果的意义给予评价。
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| 关 键 词： | 微光像增强器 微通道板 积分灵敏度 量子效率 光谱响应 |
| 文章编号： | 1002-2082（2008）01-0048-04 |
| 收稿时间： | 2007-03-25 |
| 修稿时间： | 2007-05-20 |
Theoretical limit for photocathode sensitivityof image intensifier |
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| XIANG Shi-ming.Theoretical limit for photocathode sensitivityof image intensifier[J].Journal of Applied Optics,2008,29(1):48-51. |
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| Authors: | XIANG Shi-ming |
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| Institution: | Key Laboratory of Low Light Level Technology of COSTIND, Xi′an Institute of Applied Optics, Xi′an 710065, China |
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| Abstract: | The photocathode sensitivity is one of the most important and fundamental parameters of image intensifiers,which determines the performance of the photo-electronic imaging system under low-light-level conditions. Based on the physical model of semiconductor optoelectronic emission and Plank theory of black-body radiation,the effect of 5 sub-processes on photocathode quantum efficiency is summarized. Several expressions are given to calculate the sensitivity limit under the assumption of 100% sub-quantum efficiencies in the 5 subprocesses. The ultimate sensitivity of 6 569 μA/lm is obtained for an extended blue GaAs photocathode in the waveband of (0.41～0.93)μm. |
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| Keywords: | image intensifier MCP luminous sensitivity quantum efficiency spectral response |
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