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Selective metallization of polyimide by laser-induced plasma-assisted ablation (LIPAA)
Authors:Y Hanada  K Sugioka  H Takase  H Takai  I Miyamoto  K Midorikawa
Institution:(1) RIKEN (The Institute of Physical and Chemical Research), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan;(2) Department of Applied Electronics, Faculty of Industrial Science & Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan;(3) Department of Electrical Engineering, Tokyo Denki University, 2-2 Nishiki-cho, Kanda, Chiyoda-ku, Tokyo 101-8457, Japan
Abstract:We report micromachining of polyimide (PI) by laser-induced plasma-assisted ablation (LIPAA) using a fundamental wavelength of a commercial Q-switched Ndthinsp:thinspYAG laser (1064 nm). It is found that an Au film on a glass target is effective for the LIPAA process of PI. The ablation rate reaches several tens of nanometers per pulse. After the LIPAA process, selective metallization of PI with excellent electrical properties is performed by successive electroless Cu plating. The Cu line width of 40 mgrm, which agrees with the line width of regions ablated by the LIPAA process, is achieved using an encapsulated film. PACS 42.62.-b; 52.38.-r; 85.40.Ls
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