Nitrogen vacancies as major point defects in gallium nitride |
| |
Authors: | Ganchenkova M G Nieminen R M |
| |
Institution: | COMP/Laboratory of Physics, Helsinki University of Technology, Espoo, Finland. |
| |
Abstract: | We present results of ab initio calculations for vacancies and divacancies in GaN. Particular attention is paid to nitrogen vacancies and mixed Ga-N divacancies in negatively charged states, which in n-type GaN are found to be energetically comparable with gallium vacancies. We also demonstrate that the activation energy for self-diffusion over the nitrogen sublattice is lower than over the gallium one for all Fermi-level positions, which implies the nitrogen vacancies are major defects in samples annealed at high temperatures. Possibilities for direct observations of nitrogen vacancies through positron annihilation experiments are discussed. |
| |
Keywords: | |
本文献已被 PubMed 等数据库收录! |
|