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Analysis of the threshold current in nitride-based lasers |
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| Authors: | A Hangleiter S Heppel J Off B Kuhn F Scholz S Bader B Hahn and V H rle |
| Institution: | a Institut für Technische Physik, Technische Universität Braunschweig, Mendelssohnstr. 2, D-38106 Braunschweig, Germany b 4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, Germany c Osram Opto Semiconductors, Wernerwerkstr. 2, D-93049 Regensburg, Germany |
| Abstract: | Using optical gain measurements and calculated optical gain spectra we analyse the various contributions to the threshold current observed for laser diodes. Our model is based on band-to-band transitions and includes internal polarization fields as well as multiple quantum wells. Besides good agreement between experiment and theory, our model explains the characteristic dependence of the threshold current on emission wavelength and well number. |
| Keywords: | B1 Nitrides B2 Semiconducting III-V materials B3 Laser diodes |
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