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热释电薄膜单片式UFPA器件微桥单元结构研究
引用本文:马韬,吴传贵,张万里,李言荣.热释电薄膜单片式UFPA器件微桥单元结构研究[J].红外技术,2010,32(1).
作者姓名:马韬  吴传贵  张万里  李言荣
作者单位:电子科技大学微电子与固体电子学院,四川,成都,610054
摘    要:采用RF溅射制备出Ba_(0.65)Sr_(0.35)TiO_3薄膜,剥离法制备出UFPA器件单元所需的图形化金属电极,TMAH溶液进行体硅腐蚀,并且使用保护胶和独特的夹具保护硅片正面免受腐蚀液的腐蚀.总结了一套制作微桥的简便可行的工艺流程,并最终在厚度为300μm的硅基片上成功的制备了厚度小于3 μm的面积为100 μm×100 μm的微桥单元结构.该微桥单元可以满足制备热释电薄膜单片式UFPA器件的要求.

关 键 词:单片式  非制冷红外焦平面阵列  微桥  剥离技术

Research of the Micro-bridge Fabrication for UFPA Device Pixel
MA Tao,WU Chuan-gui,ZHANG Wan-li,LI YAN-rong.Research of the Micro-bridge Fabrication for UFPA Device Pixel[J].Infrared Technology,2010,32(1).
Authors:MA Tao  WU Chuan-gui  ZHANG Wan-li  LI YAN-rong
Abstract:We prepared Ba_(0.65)Sr_(0.35)TiO_3 thin films by RF sputtering,made the graphical metal electrode for UFPA device pixel by lift-off technique;etched the monocrystalline silicon by TMAH solution.And the micro-patterns of the front side are protected effectively without being etching by the series protective glues and unique fixture.A feasible simple procedure for making micro-bridge was summarized,and eventually obtain 100 μm×100μm area,less than 5μm thick micro-bridge fabrication on a 300μm in thickness silicon chip.Preparation of the micro-bridge fabrication to meet the pyroelectric thin film UFPA device requirements.
Keywords:TMAH  monolithic  UFPA  microbridge  lift-off technique  TMAH
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