Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition |
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| Authors: | Yan Jun-Feng Wang Tao Wang Jing-Wei Zhang Zhi-Yong Zhao Wu |
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| Affiliation: | School of Information Science and Technology, Northwest University, Xi'an 710069, China; Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710068, China |
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| Abstract: | Low pressure metalorganic chemical vapour deposition (LP-MOCVD)growth and characteristics of InAsSb on (100) GaSb substrates areinvestigated. Mirror-like surfaces with a minimum lattice mismatchare obtained. The samples are studied by photoluminescence spectra,and the output is 3.17μm in wavelength. The surface of InAsSbepilayer shows that its morphological feature is dependent on bufferlayer. With an InAs buffer layer used, the best surface is obtained.The InAsSb film shows to be of n-type conduction with an electronconcentration of 8.52×1016cm-3. |
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| Keywords: | metalorganic chemical vapourdeposition (MOCVD) antimonides semiconducting indiumcompounds |
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