单晶YSZ的Xe+辐照损伤的电子显微分析

 不同注量200keV Xe⁺ 注入YSZ单晶样品的电子显微分析结果表明，随着辐照注量的增加，缺陷簇的密度增大，在1×10¹⁵~1×10¹⁶cm^-2Xe⁺注量，缺陷簇密度迅速增大，形成间隙型位错环；当Xe⁺注量增大到1×10¹⁷cm^-2，缺陷簇密度的增加变得缓慢，并且有直径为2～4nm的Xe气泡析出。选区电子衍射花样表明YSZ样品没有产生非晶化转变。在Xe⁺辐照的离位率高达约350dpa的情况下，YSZ晶体没有非晶化，其原因主要是由于注入的Xe⁺以气泡形式析出。

Electron microscopy study on irradiation damage of xenon-implanted yttria-stabilized zirconia single crystals

Transmission electron microscopy (TEM) was utilized to characterize the damage structure and the formation of Xe bubbles in 200 keV Xe~+ -implanted yttria-stabilized zirconia (YSZ) single crystals with different fluences. TEM analysis results showed that the density of defect clusters increased with increasing ion fluence. The density of defect clusters increased rapidly and formed clear interstitial type dislocation loops within dose range from 1×10~(15) Xe~+cm~(-2) to 1×10~(16) Xe~+ cm~(-2), and then the density of defect clusters increased slowly up to a dose of 1×10~(17) Xe~+ cm~(-2). Small bubbles (2～4 nm in diameter) precipitate in the sample at a dose of 1×10~(17) Xe~+ cm~(-2). No amorphization was observed in the selected area diffraction (SAD) pattern. These results also made it clear that no amorphization at about 350 dpa in the Xe~+-implanted sample was mainly caused by the precipitation of Xe bubbles.