Grain Boundary Resistivity and Electrically Induced Grain Boundary Migration (EIGM) in Metallic Bamboo Microstructures

As VLSI conductor line dimensions continue to decrease, electrotransport properties increasingly effect device lifetimes. Grain boundaries are intimately linked to these processes, providing paths of varying diffusivity, and as mobile defects themselves. Haessner et al. 6] make a challenging finding in experiments with thin gold films: based on calorimetric data, in order to account for the velocity of grain boundaries migrating in high electric current densities, the force on the atoms of a grain boundary would have to be two orders of magnitude larger than what the accepted theory for bulk ions predicts. The failure is attributed to the simplicity of the model which does not account for possible variations of the resistivity and effective valance charge that could occur in the vicinity of a grain boundary. In this paper, expressions are developed for the electron wind force on the atoms near grain boundaries, and they are written in terms of thermodynamic variables: the boundary specific volume expansion and specific resistivity. The enhancement of the wind force of the boundary atoms over the bulk wind force is calculated using published data. This model allows for more than an order of magnitude enhancement in gold, and Haessner's observation is rationalized.