| DOPING LEVEL INCREASE OF POLY(3-METHYLTHIOPHENE)FILM DURING ELECTROCHEMICAL POLYMERIZATION PROCESS |
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| 引用本文： | Jing-kun Xu,Gao-quan Shi,Feng-en Chen,Xiao-yin Hong Department of Chemistry and Bio-organic Phosphorous Chemistry Laboratory Tsinghua University Beijing 100084,China. DOPING LEVEL INCREASE OF POLY(3-METHYLTHIOPHENE)FILM DURING ELECTROCHEMICAL POLYMERIZATION PROCESS[J]. 高分子科学, 2002, 0(5): 425-430 |
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| 作者姓名： | Jing-kun Xu Gao-quan Shi Feng-en Chen Xiao-yin Hong Department of Chemistry and Bio-organic Phosphorous Chemistry Laboratory Tsinghua University Beijing 100084 China |
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| 作者单位： | Jing-kun Xu;Gao-quan Shi;Feng-en Chen;Xiao-yin Hong Department of Chemistry and Bio-organic Phosphorous Chemistry Laboratory Tsinghua University Beijing 100084，China |
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| 基金项目： | This work was supported by the National Natual Science Foundation of China (No. 50073012 & No. 50133010). |
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| 摘 要： | The Raman spectra of poly(3-methylthiophene) (PMeT) films with different thicknesses, which have beenelectrochemically deposited on a flat stainless steel electrode surface by direct oxidation of 3-methylthiophene in borontrifluoride diethyl etherate (BFEE) at a constant applied potential of 1.38 V (versus SCE), have been investigated byexcitation with a 633-nm laser beam. The spectroscopic results demonstrated that the doping level of PMeT film wasincreasing during film growth. This finding was also confirmed by electrochemical examination. Moreover, the Raman bandsassigned to radical cations and dications in doped PMeT films were found approximately at 1420 and 1400 cm~(-1),respectively. Radical cations and dications coexist on the backbone of PMeT as conductive species and their concentrationsincrease with the increase of doping level. Successive cyclic voltammetry was proved to be an effective approach toimproving the doping level of as-grown thin compact PMeT film.
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| 关 键 词： | Poly（3-methylthiophene） Raman spectra Doping level Radical cations Dications |
| 收稿时间： | 2001-10-25 |
| 修稿时间： | 2001-12-05 |
DOPING LEVEL INCREASE OF POLY(3-METHYLTHIOPHENE)FILM DURING ELECTROCHEMICAL POLYMERIZATION PROCESS* |
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| Jing-kun Xu,Gao-quan Shi,Feng-en Chen,Xiao-yin Hong. DOPING LEVEL INCREASE OF POLY(3-METHYLTHIOPHENE)FILM DURING ELECTROCHEMICAL POLYMERIZATION PROCESS*[J]. Chinese Journal of Polymer Science, 2002, 0(5): 425-430 |
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| Authors: | Jing-kun Xu Gao-quan Shi Feng-en Chen Xiao-yin Hong |
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| Affiliation: | Department of Chemistry and Bio-organic Phosphorous Chemistry Laboratory Tsinghua University Beijing 100084; China |
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| Abstract: | The Raman spectra of poly(3-methylthiophene) (PMeT) films with different thicknesses, which have beenelectrochemically deposited on a flat stainless steel electrode surface by direct oxidation of 3-methylthiophene in borontrifluoride diethyl etherate (BFEE) at a constant applied potential of 1.38 V (versus SCE), have been investigated byexcitation with a 633-nm laser beam. The spectroscopic results demonstrated that the doping level of PMeT film wasincreasing during film growth. This finding was also confirmed by electrochemical examination. Moreover, the Raman bandsassigned to radical cations and dications in doped PMeT films were found approximately at 1420 and 1400 cm~(-1),respectively. Radical cations and dications coexist on the backbone of PMeT as conductive species and their concentrationsincrease with the increase of doping level. Successive cyclic voltammetry was proved to be an effective approach toimproving the doping level of as-grown thin compact PMeT film. |
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| Keywords: | Poly(3-methylthiophene) Raman spectra Doping level Radical cations Dications |
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