Study on the saturation characteristics of high-speed uni-traveling-carrier photodiodes based on field screening analysis |
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| Authors: | Tuo Shi Bing Xiong Changzheng Sun Yi Luo Tsinghua National Laboratory for Information Science Technology State Key Lab on Integrated Optoelectronics |
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| Institution: | Tuo Shi,Bing Xiong,Changzheng Sun,and Yi Luo Tsinghua National Laboratory for Information Science and Technology,State Key Lab on Integrated Optoelectronics,Department of Electronic Engineering,Tsinghua University,Beijing 100084,China |
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| Abstract: | A back-illuminated mesa-structure InGaAs/InP charge-compensated uni-traveling-carrier(UTC) photodiode(PD) is fabricated,and its saturation characteristics are investigated.The responsivity of the 40-μmdiameter PD is as high as 0.83 A/W,and the direct current(DC) saturation current is up to 275 mA.The 1-dB compression point at the 3-dB cutoff frequency of 9 GHz is measured to be 100 mA,corresponding to an output radio frequency(RF) power of up to 20.1 dBm.According to the calculated electric field distributions in the depleted region under both DC and alternating current(AC) conditions,the saturation of the UTC-PD is caused by complete field screening at high optical injection levels. |
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