氧化锌纳米带中的面缺陷

面缺陷是纳米带中非常普遍和非常重要的一类缺陷。在有些情况下，面缺陷对于高表面能指数面的出现起着决定性的作用。同时。它们可以诱导纳米带沿着特殊的方向生长。面缺陷可以是孪晶或双晶，层错和由杂质原子聚集在特定原子面所形成的间隙原子层。在本文中。利用透射电子显微术，我们将介绍氧化锌纳米带中被发现的几种面缺陷。我们确认了两种孪晶／双晶结构，它们的孪晶面分别是（01^-13）和（^-2112）面。基面层错有I1和I2两种。在大尺寸的纳米带中，I1基面层错可以折叠到（2^110）面形成棱面层错。当少量的In离子掺入氧化锌纳米带后，我们发现伴随着杂质In在基面的聚集，形成了两种倒反畴界。

PLANAR DEFECTS IN ZnO NANOBELTS

Planar defects are the most popular and most important defects in nanobelts. In some cases, the presence of planar defects is essential for stabilizing the surfaces that exhibit higher energies and leading the fastest anisotropic growth of the nanobelts along a specific direction. Planar defects can be twins/bicrystals, stacking faults and/or interstitial stacking layer introduced by impurity atoms. In this paper, we review the planar defects observed in ZnO nanobelts by transmission electron microscopy. Two types of twin/bicrystal structures with twining planes as (0113) and (2112) have been identified. The observed basal-plane stacking faults can be classified into type I1 and I2. In large sized ZnO nanobelts, the I1 basal-plane stacking fault can fold from basal plane to (2110) plane to form the prismatic-plane stacking fault. By doping indium ions and with the accumulating of these indium ions in the basal-plane, two types of inversion domain walls or boundaries have been introduced in the ZnO nanobelts.