| 后处理工艺对PCT薄膜形貌与结构的影响 |
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| 引用本文： | 彭家根,钟朝位,张树人,张万里. 后处理工艺对PCT薄膜形貌与结构的影响[J]. 电子元件与材料, 2004, 23(10): 9-11 |
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| 作者姓名： | 彭家根 钟朝位 张树人 张万里 |
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| 作者单位： | 电子科技大学微电子与固体电子学院,四川,成都,610054;电子科技大学微电子与固体电子学院,四川,成都,610054;电子科技大学微电子与固体电子学院,四川,成都,610054;电子科技大学微电子与固体电子学院,四川,成都,610054 |
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| 基金项目： | 国家“973”项目资助 |
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| 摘 要： | 采用射频磁控溅射技术,利用快速退火工艺制备出了大面积(φ120 mm)表面光滑、连续、均匀的(Pb,Ca)TiO3(PCT)薄膜。原子力显微镜和X射线衍射分析结果表明,快速退火处理工艺较常规退火处理工艺具有晶化温度低、晶化时间短、薄膜结晶性能好、易与微电子工艺兼容等优点。经500～550 快速退火处理后,PCT薄膜已完全形成钙钛矿结构,最佳晶化温度约为550 。
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| 关 键 词： | 无机非金属材料 PCT薄膜 射频磁控溅射 退火 |
| 文章编号： | 1001-2028(2004)10-0009-03 |
Effects of the Post-annealing Processes on the Morphologies and Microstructures of PCT Thin Films |
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| PENG Jia-gen,ZHONG Chao-wei,ZHANG Shu-ren,ZHANG Wan-li. Effects of the Post-annealing Processes on the Morphologies and Microstructures of PCT Thin Films[J]. Electronic Components & Materials, 2004, 23(10): 9-11 |
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| Authors: | PENG Jia-gen ZHONG Chao-wei ZHANG Shu-ren ZHANG Wan-li |
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| Abstract: | RF magnetron sputtering technology and the rapid thermal annealing process have been utilized to fabricate the (Pb,Ca)TiO3(PCT) thin fims on a φ120 mm SiO2/Si substrate. The surface morphologies of the films are smooth, continuous and homogeneous. Analyses by the aid of atom force microscopy (AFM) and X-ray diffraction (XRD) revealed that the rapid thermal annealing process was considered to have the advantage over the conventional annealing process, such as the lower crystallization temperature, the shorter crystallization time, the better crystallinity and facilitating to be compatible with the existing micro-electronics technology. A single perovskite phase has been abtained by rapid thermal annealing at 500～550℃, whereas the optimum temperature is at about 550℃. |
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| Keywords: | inorganic non-metallic materials PCT thin films RF magnetron sputtering annealing |
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