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The efficiency of formation of primary radiation defects in LiF and MgF2 crystals
Authors:L A Lisitsyna  V M Lisitsyn  V I Korepanov  T V Grechkina
Institution:(1) Tomsk State Architecture and Construction University, Tomsk, 634003, Russia;(2) Tomsk Polytechnical University, Tomsk, 634034, Russia
Abstract:Processes of radiation formation of primary defects—F centers and self-trapped excitons—in lithium and magnesium fluorides, which have crystal lattices of different types and similar widths of the band gap and valence band, have been studied in a wide temperature range (11–500 K). It is shown that, along with qualitative similarity of the regularities of formation of the defects under study, LiF and MgF2 crystals are characterized at low temperatures (11–100 K) by different relationships between the energy dissipation channels for self-trapping electronic excitations and the types of self-trapped excitons arising.
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