| Abstract: | After a short retrospect on the development of the electron diffraction techniques it is shown that the atomic-scale morphology of the crystal surface and growth processes on it can be studied in detail during molecular beam epitaxy (MBE) by reflection high-energy electron diffraction (RHEED). This is demonstrated for the evolution of the terrace-step-structure of the singular GaAs (001) surface during growth and after growth interruption and for the attachment of Si atoms at misorientation steps on vicinal GaAs (001) surfaces. |
