| Abstract: | The fabrication and characterization of double-heterostructure (DH) laser that utilizes an indium-tin oxide (Ito) transparent cladding and top contact layer. The first room-temperature lasing operation has been obtained form ITO/InGaAsP/AlGaAs DH laser diode at threshold current density of 12.1 kA/cm2. The interfacial recombination velocity of ITO/InGaAsP Interface was estimated to be 4.9 × 104 cm/s from a simple model to account for high threshold current, and optical measurements of spontaneous emission and lasing spectra from top stripe window and facet were done. |
