Liquid Phase Epitaxy of AlGaInP on GaAs Substrate Using AlGaAs Buffer Layer

Liquid phase epitaxial layers of AlGaInP were successfully grown on Al_0.9Ga_0.1 As buffer layer with varying aluminum melt composition. Epitaxial layers were characterised by using a scanning elelctron microscope, X-ray diffraction, photoluminescence (PL) and Auger depth profile measurements. The shortest peak wavelength of PL spectra obtained in the samples was 630 nm at room temperature. It was found that the thickness of the AlGaInP layer is very small due to rapid change of aluminum in the melt composition.