Thermoelectric Power of Polycrystalline Sb2Te3 Films

Polycrystalline stochiometric films of Sb₂Te₃ with different thickness were prepared on glass substrates by a flash evaporation technique at constant substrate temperature of 423 K. The thermoelectric power of these films was determined by measuring integrally the developed thermo — e.m.f. at different temperature differences between the hot and cold ends. The thermoelectric power of Sb₂Te₃ films was determined as a function of the temperature and thickness of the films. It was found that the Fermi level becomes pinned at higher temperatures. The values of γ, E₀, and A parameters were determined as functions of the thickness of the films. The dependence of the thermoelectric power on the reciprocal thickness of the films was explained on the basis of the grain size effect.