Ion bombardment-induced mechanical stress in plasma-enhanced deposited silicon nitride and silicon oxynitride films |
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Authors: | W. A. P. Claassen |
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Affiliation: | (1) Elcoma, Nederlandse Philips Bedrijven B.V., Gerstweg 2, 6534 AE Nijmegen, The Netherlands |
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Abstract: | We have studied the influence of different deposition conditions on the mechanical stress of silicon nitride and silicon oxynitride layers formed by plasma-enhanced deposition onto silicon substrates. It appears that the mechanical stress of the as-deposited silicon (oxy)nitride layer is a combined effect of the extent of ion bombardment and the deposition temperature on the hydrogen desorption rate. Deposited films show a tensile stress character when the hydrogen desorption rate is thermally controlled, whereas in the case of an ion-bombardement-controlled hydrogen desorption rate the deposited films have a compressive stress. It is also shown that due to annealing at temperatures above the deposition temperature the films are densified as a result of hydrogen desorption and cross-linking. |
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Keywords: | Silicon nitride silicon oxynitride plasma deposition mechanical stress in thin films |
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