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P-BN/n-Si Heterojunction Prepared by Beryllium ion Implantation
Authors:HE Bin  CHEN Guang-Hua  LI Zhi-Zhong  DENG Jin-Xiang  ZHANG Wun-Jun
Institution:College of Materials Science and Technology, Beijing University of Technology, Beijing 100022College of Applied Sciences, Beijing University of Technology, Beijing 100022Center of Super-Diamond and Advance Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong
Abstract:
Keywords:61  72  Vv  73  40  Kp  72  20  -i  81  15  Cd
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